inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK526 description drain current C i d =10a@ t c =25 drain source voltage- : v dss =250v(min) fast switching speed applications designed especially for low voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 250 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 40 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK526 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 250 v v gs(th) gate threshold voltage v ds = 10v; i d = 1ma 1.5 3.5 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =5a 0.4 0.6 v ds(on) drain-source saturation voltage i f = 10a; v gs =10v 4.5 7 v i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =250v; v gs = 0 1 ma tr rise time v gs =10v;i d =5a; r l =50 50 100 ns ton turn-on time 70 140 ns tf fall time 60 120 ns toff turn-off time 160 320 ns pdf pdffactory pro www.fineprint.cn
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